BOJACK IRF520N MOSFET Transistors IRF520N 9.7 A 100 V N-Channel Power MOSFET TO-220AB (Pack of 10 Pcs)
BOJACK IRF520N MOSFET Transistors IRF520N 9.7 A 100 V N-Channel Power MOSFET TO-220AB (Pack of 10 Pcs)
BOJACK IRF520N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRF520N is available in a TO-220AB package On-state resistance Rds(on): 0.20 ohm Voltage Vgs highest: ±20V Number of stitches: 3 Operating Temperature:-55 °C to +175 °C Thermal resistance junction to case A: 0.32°C/W Voltage Vds Typical: 100V Current Id continuous: 9.7A Current Idm pulse: 38A Surface Mount Device: Through Hole Mounting Lead-free environmental protection
Product Features
- Transistor polarity: N-Channel
- Drain current (Id Max): 9.7A
- Voltage Vds Max: 100V
- Power(Max): 48W